Pensl / Stephani / Hundhausen Silicon Carbide and Related Materials 2000

Erscheinungsjahr 2001
ISBN: 978-3-0357-0557-7
Verlag: Trans Tech Publications
Format: PDF
Kopierschutz: 0 - No protection

E-Book, Englisch, 860 Seiten

Wide bandgap semiconductors such as SiC, III-V nitrides and related compounds are currently attracting more and more attention due to their very interesting physical properties, which are different from those of conventional semiconductors. Steady improvement of the crystal quality and improved knowledge of the physical properties of these materials are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue light emitters.Volume is indexed by Thomson Reuters CPCI-S (WoS).

Autoren/Hrsg.

Pensl, Gerhard

Stephani, Dietrich

Hundhausen, Martin

Fachgebiete

• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Preface and Overview
Sponsors and Committees
Preface
Overview
Large Diameter, Low Defect Silicon Carbide Boule Growth
SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results
Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process
Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
Progress in 4H-SiC Bulk Growth
Stability Criteria for 4H-SiC Bulk Growth
Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
Some Aspects of Sublimation Growth of SiC Ingots
Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization
Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method
Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
Crystal Growth of 15R-SiC and Various Polytype Substrates
Micropipe Filling by the Sublimation Close Space Technique
Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method
Chemical Vapor Deposition of SiC by the Temperature Oscillation Method
Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
Modeling Analysis of SiC CVD in a Planetary Reactor
Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
Ab Initio Study of Silicon Carbide: Bulk and Surface Structures
SiC Defect Density Reduction by Epitaxy on Porous Surfaces
Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
Surface Morphology of 4H-SiC Inclined towards and Grown by APCVD Using the Si2Cl6+C3H8 System
Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates
SiC Polytype Transformation on the Growth Surface
Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing
How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
Growth of 3C-SiC on Si by Low Temperature CVD
Growth of SiC on Si(100) by Low-Pressure MOVPE
The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates
Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
The Influence of Ge on the SiC Nucleation on (111)Si Surfaces
In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces
Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron Sputtering
Laser Crystallization of Amorphous SiC Thin Films on Glass
TEM Investigation of Si Implanted Natural Diamond
Surface Reconstruction on SiC(0001) and SiC(000-1): Atomic Structure and Potential Application for Oxidation, Stacking and Growth
Interplay of Surface Structure, Bond Stacking and Heteropolytypic Growth of SiC
Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3
Comparison of HF and Ozone Treated SiC Surfaces
Preparation and Characterization of Hydrogen Terminated 6H-SiC
Polytype and Polarity of Silicon Carbide and Aluminium Nitride Films Growing by MBE: A Nondestructive Identification
Surface Abstraction Reactions at Experimental Temperatures; a Theoretical Study of 4H-SiC(0001)
Combined Scanning Tunneling Microscopy and Photoemission Studies of the ß-SiC(100) c(4x2) Surface Reconstruction
Investigation of the SiC Surface after Nitrogen Plasma Treatment
Morphology of Sublimation Grown 6H-SiC(000-1) Surfaces
Germanium on SiC(0001): Surface Structure and Nanocrystals
Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC
Ion-Irradiation Effect on the Ni/SiC Interface Reaction
Analysis of Strain and Defect Formation of Low-Dimensional Structures in SiC
Source Material Related Distribution of Defects in 6H-SiC Single Crystals
Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC
4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing
X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide
X-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiC
High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers
Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide
Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing
Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC
Lattice Parameter Measurements of 3C-SiC Thin Films Grown on 6H-SiC(0001) Substrate Crystals
Self Diffusion in SiC: the Role of Intrinsic Point Defects
Modeling of Boron Diffusion in Silicon Carbide
Quantitative Modeling of Hydrogen Diffusion and Reactivation of H-Passivated Al-Acceptors in SiC
Optical Characterization of SiC Materials: Bulk and Implanted Layers
Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC
Micro-Raman and Photoluminescence Study on n-type 6H-SiC
Low-Frequency Vibrational Spectroscopy in SiC Polytypes
Free Carrier Diffusion in 4H-SiC
Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy
Zeeman Effect of D1 Bound Exciton in 4H-SiC
As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons
Presence of Hydrogen in SiC
Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
Investigation of Electroluminescence across 4H-SiC p+/n-/n+ Structures Using Optical Emission Microscopy
Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy
Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method
Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy
Epitaxial Growth and Properties of SiC Layers Grown on a-SiC(0001) by Solid-Source MBE: A Photoluminescence Study
Prediction of Optical Properties of Si and Ge Dots in SiC
Investigation of Variable Incidence Angle Spectroscopic Ellipsometry for Determination of Below Band Gap Uniaxial Dielectric Function
Theory of Hydrogen in Silicon Carbide
Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
Proton Irradiation Induced Defects in 4H-SiC
Intrinsic Defect Complexes in a-SiC: the Formation of Antisite Pairs
Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC
Implantation Temperature Dependent Deep Level Defects in 4H-SiC
Boron in SiC: Structure and Kinetics
Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
Boron Centers in 4H-SiC
Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient
Electrical Activity of Isolated Oxygen Defects in SiC
Beryllium-Related Defect Centers in 4H-SiC
Band Gap States of Cr in the Lower Part of the SiC Band Gap
Tantalum and Tungsten in Silicon Carbide: Identification and Polytype Dependence of Deep Levels
Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique
Intrinsic Mobility of Conduction Electrons in 4H-SiC
A Study of Band to Band Tunneling with Application to High-Field Transport in Hexagonal SiC Polytypes
Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect
Donor Densities and Donor Energy Levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements
Intrinsic Defects in Silicon Carbide Polytypes
Radiation-Induced Pair Defects in 6H-SiC Studied by Optically Detected Magnetic Resonance
Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC
The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC
Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance
Calculated Positron Annihilation Parameters for Defects in SiC
Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
Recent Progress in SiC Epitaxial Growth and Device Processing Technology
Doping of Silicon Carbide by Ion Implantation
Neutron Irradiation of 4H SiC
Techniques for Depth Profiling of Dopants in 4H-SiC
Growth of d-Doped SiC Epitaxial Layers
Effect of Residual Damage on Carrier Transport Properties in a 4H-SiC Double Implanted Bipolar Junction Transistor
High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing
Enhancement of Electrical Activation of Aluminum Acceptors in 6H-SiC by Co-Implantation of Carbon Ions
High Dose Implantation in 6H-SiC
Precipitate Formation in Heavily Al-Doped 4H-SiC Layers
Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC
Structural and Electrical Characterization of Ion Beam Synthesized and n-Doped SiC Layers
Channeling Measurements of Ion Implantation Damage in 4H-SiC
The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single Crystal SiC: High Dose Effects
Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates
Ru Schottky Barrier Contacts to n- and p-type 6H-SiC
Stability of Molybdenum Schottky Contact to Silicon Carbide
Effects of Thermal Annealing on Cu/6H-SiC Schottky Properties
Electrochemical Characterization of p-Type Hexagonal SiC
A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices
Interface States of SiO2/SiC on (11-20) and (0001) Si Faces
Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face
Steam Annealing Effects on CV Characteristics of MOS Structures on (11-20) Face of 4H-SiC
Role of H2 in Low Temperature Post-Oxidation Anneal for Gate Oxide on 6H-SiC
Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties
Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy
Remote PECVD Oxide Utilized in U-MOS Structures and Different MOSFETs on SiC
Indications for Nitrogen-Assisted Removal of Carbon from SiO2-SiC Interface
Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface
Dependence of Wet Oxidation on the Defect Density in 3C-SiC
SiC Microwave Power Devices
1700 V SiC Schottky Diodes Scaled to 25 A
Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC
A High Performance JBS Rectifier - Design Considerations
Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination
Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
Influence of the Buried p-Layer on the Blocking behavior of Vertical JFETs in 4H-SiC
A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers
Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage
Double Implanted Power MESFET Technology in 4H-SiC
Source Resistance Analysis of SiC-MESFET
Design and Implementation of RESURF MOSFETs in 4H-SiC
Comparison of Super-Junction Structures in 4H-SiC and Si for High Voltage Applications
SiC Junction Control, an Alternative to MOS Control High Voltage Switching Devices
Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
Silicon Carbide Zener Diodes
Characteristics of Epitaxial and Implanted N-Base 4H-SiC GTO Thyristors
Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor
SiC Based Gas Sensors and their Applications
High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications
Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes
Thin Heavily Compensated 6H-SiC Epilayers as Nuclear Particle Detectors
The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys
AlN Crystal Growth by Sublimation Technique
Investigation of the Structure of 2H-AlN Films on Si(001) Substrates
Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures
Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport
From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing
Characterization of GaAlN/GaN Superlattice Heterostructures
III-Nitride Power Devices - Good Results and Great Expectations
High-Performance Surface-Channel Diamond Field-Effect Transistors