Radovanovic / Annema / Nauta High-Speed Photodiodes in Standard CMOS Technology

1. Auflage 2006
ISBN: 978-0-387-28592-4
Verlag: Springer US
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band 869, 160 Seiten, eBook

Reihe: The Springer International Series in Engineering and Computer Science

High-speed Photodiodes in Standard CMOS Technology  describes high-speed photodiodes in standard CMOS technology which allow monolithic integration of optical receivers for short-haul communication. For short haul communication the cost aspect is important , and therefore it is desirable that the optical receiver can be integrated in the same CMOS technology as the rest of the system. If this is possible then ultimately a singe-chip system including optical inputs becomes feasible, eliminating EMC and crosstalk problems, while data rate can be extremely high. The problem of photodiodes in standard CMOS technology it that they have very limited bandwidth, allowing data rates up to only 50Mbit per second. High-speed Photodiodes in Standard CMOS Technology  first analyzes the photodiode behaviour and compares existing solutions to enhance the speed. After this, the book introduces a new and robust electronic equalizer technique that makes data rates of 3Gb/s possible, without changing the manufacturing technology. The application of this technique can be found in short haul fibre communication, optical printed circuit boards, but also photodiodes for laser disks.

Zielgruppe

Professional/practitioner

Autoren/Hrsg.

Radovanovic, Sasa

Annema, Anne-Johan

Nauta, Bram

Inhaltsverzeichnis

Introduction. Outline. Short range optical interconnection. Why optical interconnection? Characteristics of light. Optical fiber types. High intensity light sources. Photodetectors  introduction. High-speed optical receivers in CMOS for [small lambda] = 850 nm-literature overview. CMOS photodiodes for [small lambda] = 850 nm. Introduction. Bandwidth of photodiodes in CMOS. Intrinsic (physical) photodiode bandwidth. Extrinsic (electrical) photodiode bandwidth. Noise in photodiodes. Summary and conclusions. High data-rates with CMOS photodiodes. Introduction. Transimpedance amplifier design. Photodiode selection. Equalizer design. Robustness on spread and temperature. Experimental results. Conclusions. Bulk CMOS photodiodes for [small lambda]= 400 nm. Introduction. Finger nwell/p-substrate diode in adjoined-well technology. Finger n+/nwell/p-substrate diode. Finger n+/p-substrate photodiode in separate-well technology. Finger p+/nwell/p-substrate in adjoined-well technology. p+/nwell photodiode. Conclusion. Polysilicon photodiode. High-speed lateral polydiode. Noise in polysilicon photodiodes. Time domain measurements. Quantum efficiency and sensitivity. Conclusion. CMOS photodiodes: generalized. Introduction. Generalization of CMOS photodiodes. Device layer - photocurrent amplitude. Analog equalization. Summary and Conclusions. Conclusions. Conclusions.