Buch, Englisch, 350 Seiten, Format (B × H): 164 mm x 242 mm, Gewicht: 1510 g
Theory and Device Applications
Buch, Englisch, 350 Seiten, Format (B × H): 164 mm x 242 mm, Gewicht: 1510 g
ISBN: 978-1-4419-0551-2
Verlag: Springer Us
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Zielgruppe
Professional/practitioner
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Mikroprozessoren
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Maschinenbau Mechatronik, Mikrosysteme (MEMS), Nanosysteme
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
Weitere Infos & Material
Overview: The Age of Strained Devices.- Band Structures of Strained Semiconductors.- Stress, Strain, Piezoresistivity, and Piezoelectricity.- Strain and Semiconductor Crystal Symmetry.- Band Structures of Strained Semiconductors.- Low-Dimensional Semiconductor Structures.- Transport Theory of Strained Semiconductors.- Semiconductor Transport.- Strain in Semiconductor Devices.- Strain in Electron Devices.- Piezoresistive Strain Sensors.- Strain Effects on Optoelectronic Devices.
