E-Book, Englisch, 430 Seiten, Format (B × H): 165 mm x 240 mm
Triboulet / Siffert CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications
1. Auflage 2009
ISBN: 978-0-08-091458-9
Verlag: Elsevier Science & Technology
Format: EPUB
Kopierschutz: 6 - ePub Watermark
Physics, CdTe-based Nanostructures, CdTe-based Semimagnetic Semiconductors, Defects
E-Book, Englisch, 430 Seiten, Format (B × H): 165 mm x 240 mm
Reihe: European Materials Research Society Series
ISBN: 978-0-08-091458-9
Verlag: Elsevier Science & Technology
Format: EPUB
Kopierschutz: 6 - ePub Watermark
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful.
Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZTReview of the CdTe recent developments Fundamental background of many topics clearly introduced and exposed
Fachgebiete
Weitere Infos & Material
1;Front Cover;1
2;Physics, cdte-based Nanostructures, cdte-based Semimagnetic semiconductors, Defects;4
3;Copyright Page;5
4;Contents;6
5;List of Contributors;10
6;Foreword;1
7;Chapter 1: Introduction;14
8;Chapter 2: Physics;18
9;Chapter 2A: Zinc Blende Alloy Materials: Band Structures and Binding Properties;20
9.1;1. Introduction;20
9.2;2. Survey of First Principles Status;21
9.3;3. Crystal Structures, Binding, and Elastic Constants;22
9.4;4. Concentration Fluctuations;28
9.5;5. Conclusions;32
9.6;Acknowledgments;33
9.7;References;33
10;Chapter 2B: Optical Phonon Spectra in CdTe Crystals and Ternary Alloys of CdTe Compounds;35
10.1;1. Introduction;35
10.2;2. Phonon Spectra of CdTe;35
10.3;3. Localized Modes of Impurities In CdTe;40
10.4;4. Ternary Alloys of the CdTe Compounds;42
10.5;References;49
11;Chapter 2D: Optical Properties of CdTe;72
12;Chapter 2C: Band Structcre;51
12.1;1. Parameters at 300 K and Lowertemperatures;51
12.2;2. Electrical Properties;63
12.3;Acknowledgments;69
12.4;References;69
13;Chapter 3: CdTe-Based Nanostructures;112
13.1;1. Growth;113
13.2;2. Electronic Properties;127
13.3;3. Perspectives;141
13.4;Acknowledgments;142
13.5;References;142
14;Chapter 4: CdTe-Based Semimagnetic Semiconductors;146
14.1;1. Introduction;146
14.2;2. Crystal Growth Technology of CdMnTe;147
14.3;3. Physical Properties of Bulk CdMnTe;148
14.4;4. Other Cdte-Based Semimagnetic Semiconductors;157
14.5;5. Epitaxial Layers and Low-Dimensional Structures;158
14.6;6. Conclusions and Prospects;176
14.7;Acknowledgments;177
14.8;References;177
15;Chapter 5: Defects;182
16;Chapter 5A: Extended Defects in CdTe;184
16.1;1. Introduction;184
16.2;2. Crystallography, Descriptions of the Defect Types and Defect Phenomena;193
16.3;3. Defects in Bulk Crystals of CdTe;221
16.4;Acknowledgements;234
16.5;Literature on Extended Defects in CdTe;234
16.6;References;235
17;Chapter 5B: Inclusions and Precipitates in CdZnTe Substrates;241
17.1;1. Introduction;241
17.2;2. Second Phase Particles: Formation and Identification;243
17.3;3. How to Produce Precipitate and Inclusion Free CdZnTe Substrates;255
17.4;4. CdZnTe Wafer Purification;264
17.5;5. Conclusion;267
17.6;References;268
18;Chapter 5C: Point Defects;271
19;Chapter 5C1: Theoretical Calculation of Point Defect Formation Energies in CdTe;272
19.1;1. Introduction;272
19.2;2. Formation Energies;273
19.3;3. Electronic Excitation Energies;274
19.4;4. Defect Free Energies;275
19.5;5. Prediction of Native Point Defect Densities in CdTe;276
19.6;6. Native Defects and their Relationship to Doping;277
19.7;7. Future Challenges;277
19.8;References;278
20;Chapter 5C2: Experimental identification ofintrinsic point defects;279
21;Chapter 5C2A: Characterization of Intrinsic Defect Levels in CdTe and CdZnTe;280
21.1;1. Introduction;280
21.2;2. Characterization of Various Defect Levels in Cdte/Czt;282
21.3;3. Conclusions;302
21.4;Acknowledgments;302
21.5;References;303
22;Chapter 5C2B: Experimental Identification of the Point Defects;305
22.1;1. Introduction;305
22.2;2. Charged PDs;306
22.3;References;319
23;Chapter 6: Doping;322
23.1;1. Preliminary Remarks;322
23.2;2. Impurities in CdTe;323
23.3;3. General Aspects of Dopant Behaviour;326
23.4;4. Dopants in CdTe;330
23.5;References;369
24;Chapter 7: Impurity Compensation;376
24.1;1. Introduction;376
24.2;2. Compensated Conductivity;377
24.3;3. Semi-Insulating State;385
24.4;4. Amphoteric Impurities;396
24.5;5. Conclusion;397
24.6;References;398
25;Author Index;402
26;Subject Index;426
