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Buch, Englisch, 876 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1600 g
Buch, Englisch, 876 Seiten, Format (B × H): 170 mm x 240 mm, Gewicht: 1600 g
ISBN: 978-3-0364-0264-2
Verlag: Trans Tech Publications
Selected peer-reviewed extended articles based on abstracts presented at the 21 International Conference on Silicon Carbide and Related Materials (ICSCRM 2024).
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Preface
Chapter 1: Substrate and Epitaxial Layer Manufacturing
Study on Homoepitaxy Performance of Engineered 150 mm and 200 mm SiC Substrates in a Multi-Wafer Batch Reactor
A Study of Epitaxial Growth on 4H-SiC Substrates Treated by Plasma Polish Dry Etch (PPDE) Process
Thick Semi-Insulating 4H-SiC Layer Exfoliation for Non-Epitaxial Engineered Substrates
Lab-Based X-Ray Topography Characterization of Axial Samples from 4H-SiC Boules Grown by PVT Method
New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
Process Gas Control for High-Resistance HPSI-SiC Growth
High-Temperature Adhesive Bonding of 4H-SiC Substrates
New Insights into the Occurrence of Prismatic Slip during PVT Growth of SiC Crystals
SmartSiC™ 150 & 200mm Engineered Substrate: Enabling SiC Power Devices with Improved Performances and Reliability
Development of a Novel Warpage Control Method for Epi-Ready 4H-SiC Wafers by Depositing Homoepitaxial Layers on both Si- and C-Faces
Improvement of the Yield during Crystal Growth of SiC by PVT by Proper Selection and Design of Hot Zone Isolation Components
Filling-Design Effect of Powder Source in the Crucible on SiC Single-Crystal Growth
Nitrogen Dopant Incorporation into Epitaxial 4H-SiC and the Influence of CVD Growth Parameters
Epitaxial SiC Development for High Nitrogen Incorporation
The 4H-SiC Epitaxy Study of Ammonia Doping
Formation of Alternating Epilayers of 4H-SiC and 3C-SiC by Simultaneous Lateral Epitaxy
Predictive Doping and Thickness Analysis of a Multi-Wafer SiC Warm-Wall Epi Reactor for Improved Layer Cpks
Recent Advancement in Noncontact Wafer Level Electrical Characterization for WBG Technologies
Active Planarization Method from Rough Surface of 4º-off 4H-SiC (0001) Controlled by Step Bunching and Debunching Mechanism Using Dynamic AGE-ing®
The Application of Dynamical Thermal Annealing Processes after Mechanical Slicing as an Integrated Contactless SiC Wafering Method to Control Crystal Defects
Optimization of Heat Transfer Design for High Quality 4H-SiC Ingot Growth
High-Quality SiC Crystal Growth by Cooldown Rate Control at Cooling Stage
Chapter 2: Structural Defects in Silicon Carbide
Deep-Ultraviolet Laser-Based Defect Inspection of Single-Crystal 4H-SiC and SmartSiCTM Engineered Substrates for High Volume Manufacturing
Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation
Analysis of Trap Centers Generated by Hydrogen Implantation in 4H-SiC Bonded Substrates
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions with Silicon Energy-Filter for Ion Implantation
Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 µm Thick 4H-SiC Epitaxial Layer
Evaluation of 4HSiC Epitaxial CVD Process on Different 200 mm Substrates for Power Device Applications
Characterization of Interface Trap and Mobility Degradation in SiC MOS Devices Using Gated Hall Measurements
Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes
Investigation on Bipolar Degradation Caused by Micropipe in 3.3 kV SiC-MOSFET
Suppression and Analysis of Bipolar Degradation in 4H-SiC PiN Diodes through Proton Implantation
Punching of Prismatic Dislocation Loops from Inclusions in 4H-SiC Wafers
Exploring the Influence of Implant Profile and Device Design on Basal Plane Dislocation Generation in 1.2kV 4H-SiC Power MOSFETs
Coherency between Epitaxial Defectivity, Surface Voltage, Photoluminescence Mapping and Electrical Wafer Sorting for 200mm SiC
