E-Book, Englisch, 360 Seiten, Web PDF
Amos Principles of Transistor Circuits
7. Auflage 2013
ISBN: 978-1-4831-0503-1
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Introduction to the Design of Amplifiers, Receivers and Digital Circuits
E-Book, Englisch, 360 Seiten, Web PDF
ISBN: 978-1-4831-0503-1
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark
Stan Amos, formerly head of Technical Publications Section Engineering Training Department BBC, has been writing about electronics since the 1950s.
Autoren/Hrsg.
Weitere Infos & Material
1;Front Cover;1
2;Principles of Transistor Circuits;4
3;Copyright Page;5
4;Table of Contents;8
5;Acknowledgements;6
6;Preface to the Seventh Edition;7
7;CHAPTER 1. Semiconductors and Junction Diodes;10
7.1;INTRODUCTION;10
7.2;MECHANISM OF SEMICONDUCTION;11
7.3;COMPOUND SEMICONDUCTORS;18
7.4;PN JUNCTIONS;19
7.5;JUNCTION DIODES;23
8;CHAPTER 2. Basic Principles of Transistors;31
8.1;BIPOLAR TRANSISTORS;31
8.2;FIELD-EFFECT TRANSISTORS;45
9;CHAPTER 3. Common-base and Common-gate Amplifiers;54
9.1;COMMON-BASE AMPLIFIERS;54
9.2;COMMON-GATE AMPLIFIERS;63
10;CHAPTER 4. Common-emitter and Common-source Amplifiers;66
10.1;COMMON-EMITTER AMPLIFIERS;66
10.2;COMMON-SOURCE AMPLIFIERS;76
11;CHAPTER 5. Common-collector and Commondrain Amplifiers (Emitter and Source Followers);78
11.1;COMMON-COLLECTOR AMPLIFIERS;78
11.2;COMMON-DRAIN AMPLIFIERS;87
11.3;COMPARISON OF FIELD-EFFECT TRANSISTOR AMPLIFIERS;88
12;CHAPTER 6. Bias and D.C. Stabilisation;90
12.1;BIPOLAR TRANSISTORS;90
12.2;FIELD-EFFECT TRANSISTORS;105
13;CHAPTER 7. Small-signal A.F. Amplifiers;110
13.1;DEFINITION OF SMALL-SIGNAL AMPLIFIER;110
13.2;DISTINCTION BETWEEN VOLTAGE AND CURRENT AMPLIFIERS;110
13.3;TRANSISTOR PARAMETERS IN SMALL-SIGNAL AMPLIFIERS;112
13.4;SINGLE-TRANSISTOR STAGES;112
13.5;TWO-STAGE AMPLIFIERS;115
13.6;USE OF NEGATIVE FEEDBACK;116
13.7;TWO-STAGE AMPLIFIERS;120
13.8;EMITTER FOLLOWER;126
13.9;DARLINGTON CIRCUIT;128
13.10;LOW-NOISE TRANSISTOR AMPLIFIERS;129
13.11;CIRCUITS EMPLOYING F.E.T. AND BIPOLAR TRANSISTORS;130
14;CHAPTER 8. Large-signal A.F. Amplifiers;131
14.1;DEFINITION OF A LARGE-SIGNAL AMPLIFIER;131
14.2;TRANSISTOR PARAMETERS IN LARGE-SIGNAL AMPLIFIERS;131
14.3;CLASS-A AMPLIFIERS;132
14.4;CLASS-B AMPLIFIERS;135
14.5;SYMMETRICAL CLASS-B AMPLIFIER;141
14.6;ASYMMETRIC CLASS-B AMPLIFIER;143
14.7;COMPLEMENTARY CLASS-B AMPLIFIER;144
14.8;INTEGRATED-CIRCUIT A.F. POWER AMPLIFIER;148
14.9;HEAT SINKS;149
14.10;DARLINGTON POWER TRANSISTORS;152
15;CHAPTER 9. D.C. and Pulse Amplifiers;153
15.1;INTRODUCTION;153
15.2;D.C. AMPLIFIERS;153
15.3;OPERATIONAL AMPLIFIERS;157
15.4;PULSE AMPLIFIERS;162
15.5;VOLTAGE PULSE AMPLIFIERS;165
15.6;COMPLEMENTARY EMITTER FOLLOWER;167
15.7;VIDEO AMPLIFIER FOR TELEVISION RECEIVER;168
15.8;INTEGRATED-CIRCUIT PULSE AMPLIFIER;173
16;CHAPTER 10. R.F. and I.F. Amplifiers;175
16.1;INTRODUCTION;175
16.2;CLASS-C OPERATION;175
16.3;COMMON-EMITTER R.F. AMPLIFIERS;177
16.4;COMMON-BASE R.F. AMPLIFIER;178
16.5;I.F. AMPLIFIERS;184
16.6;AUTOMATIC GAIN CONTROL (A.G.C.);194
16.7;DECOUPLING;196
16.8;USE OF INTEGRATED CIRCUITS;197
17;CHAPTER 11. Sinusoidal Oscillators;199
17.1;INTRODUCTION;199
17.2;POSITIVE-FEEDBACK OSCILLATORS;200
17.3;PHASE-SHIFT OSCILLATORS;204
17.4;NEGATIVE-RESISTANCE OSCILLATORS;211
18;CHAPTER 12. Modulators, Demodulators, Mixers and Receivers;216
18.1;INTRODUCTION;216
18.2;AMPLITUDE MODULATORS;216
18.3;FREQUENCY MODULATORS;217
18.4;A.M. DETECTORS;219
18.5;F.M. DETECTORS;227
18.6;COMPLETE RECEIVERS;236
19;CHAPTER 13. Pulse Generators;237
19.1;INTRODUCTION: THE TRANSISTOR AS A SWITCH;237
19.2;MULTIVIBRATOR: BISTABLE;239
19.3;MULTIVIBRATOR: MONOSTABLE;244
19.4;MULTIVIBRATOR: ASTABLE;251
19.5;SYNCHRONISING OF MULTIVIBRATORS;253
19.6;EMITTER-COUPLED MULTIVIBRATOR;254
19.7;BLOCKING OSCILLATOR;256
20;CHAPTER 14. Sawtooth Generators;262
20.1;INTRODUCTION;262
20.2;SIMPLE DISCHARGER CIRCUIT;263
21;CHAPTER 15. Digital Circuits;271
21.1;INTRODUCTION;271
21.2;LOGIC LEVELS;271
21.3;BINARY SCALE;272
21.4;LOGIC GATES;273
21.5;BISTABLES;284
22;CHAPTER 16. Further Applications of Transistors and other Semiconductor Devices;307
22.1;INTRODUCTION;307
22.2;SUPPLY-VOLTAGE STABILISING CIRCUITS;307
22.3;CAPACITANCE-DIODE A.F.C. CIRCUIT;316
22.4;D.C. CONVERTERS;318
22.5;PHOTO-TRANSISTORS;320
22.6;THYRISTORS;322
22.7;ATTENUATOR USING AN F.E.T.;331
23;APPENDIX A: The Manufacture of Transistors and Integrated Circuits;333
23.1;PREPARATION OF GERMANIUM FOR TRANSISTOR MANUFACTURE;333
23.2;PREPARATION OF SILICON FOR TRANSISTOR MANUFACTURE;334
23.3;GROWN TRANSISTORS;334
23.4;ALLOY JUNCTION TRANSISTORS;335
23.5;SURFACE-BARRIER TRANSISTOR;337
23.6;DRIFT TRANSISTORS;338
23.7;DIFFUSED TRANSISTORS;338
23.8;EPITAXIAL DIFFUSED TRANSISTORS;340
23.9;PLANAR TRANSISTORS;341
23.10;INTEGRATED (MONOLITHIC) CIRCUITS;343
24;APPENDIX B: Transistor Parameters;346
24.1;INTRODUCTION;346
24.2;Z PARAMETERS;346
24.3;Y PARAMETERS;347
24.4;HYBRID PARAMETERS;348
24.5;RELATIONSHIP BETWEEN HYBRID PARAMETERS AND THE T-SECTION EQUIVALENT CIRCUIT;350
25;APPENDIX C: The Stability of a Transistor Tuned Amplifier;352
26;Index;356