Button Topics in Millimeter Wave Technology

Volume 2
1. Auflage 2013
ISBN: 978-1-4832-5745-7
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, 264 Seiten, Web PDF

Topics in Millimeter Wave Technology is a compendium of papers dealing with plasma waves, TUNNETT diodes, and solid-state devices. One paper describes the application of the TUNNET diode, a semiconductor with a coherent signal source of over 100 GHz to 1000 GHz. The paper notes the possibility of achieving more than 1000 GHz through sophisticated device fabrication technology. Another paper discusses the use of computer-aided testing of superconductor-insulator-superconductor (SIS) junction whose mixing properties are effected by the ski-sloped shape of the current-voltage curve. Such testing methods are useful at fixed or variable temperatures from 15 K to 300 K. One paper reviews the collective Thomson scattering theory, including the application of the multichannel far-infrared scattering system in the basic tokamak plasma physics. Another paper discusses the static induction transistor for very high frequency operation as the millimeter to submillimeter wave region is the ideal static induction transistor in ballistic devices. This review material can be helpful for nuclear scientists, nuclear engineers, students of physics, and researchers involved in plasma physics and semiconductor technology.

Autoren/Hrsg.

Button, Kenneth J

Inhaltsverzeichnis

1;Front Cover;1
2;Topics in Millimeter Wave Technology;4
3;Copyright Page;5
4;Table of Contents;6
5;CONTRIBUTORS;8
6;CHAPTER 1. The CW GaAs TUNNETT Diodes;10
6.1;I. Introduction;11
6.2;II. Theory of TUNNETT Diode;12
6.3;III. Preparation of the GaAs Hyperabrupt p+-n+-i(v)-n+ Diode;28
6.4;IV. Experimental Results;31
6.5;V. Features of the GaAs Hyperabrupt p+-n+-i-n+ TUNNETT Diodes;46
6.6;VI. Future of the TUNNETT Diode;50
6.7;VII. Conclusion;52
6.8;REFERENCES;52
7;CHAPTER 2. Computer-Aided Testing of SIS Junctions and Solid-State Devices;56
7.1;I. Introduction;56
7.2;II. Nonlinearities in SIS Junctions, Schottky Diodes and FETS;57
7.3;III. Description of Test System;61
7.4;IV. Software;61
7.5;V. Measurements;63
7.6;VI. Conclusions;67
7.7;REFERENCES;67
7.8;Appendix A. Calculation of Series Resistance Ideality Factor and Saturation Current;68
7.9;Appendix B. Typical Output for Diode Test Performed for a Device Temperature of 200 K and a Forward Current from

1 µ. to 3 mA;69
7.10;Appendix C. Program Listing;71
7.11;Appendix D. Flowchart;87
8;CHAPTER 3. Multichannel Far-Infrared Collective Scattering System for Plasma Wave Studies;92
8.1;I. Introduction;92
8.2;II. Review of Collective Thomson Scattering Theory;95
8.3;III. Far-Infrared Probe Source;106
8.4;IV. Optical Scattering System;119
8.5;V. Mixers, Amplifiers and Data Acquisition;139
8.6;VI. Calibration of Optical System;149
8.7;VII. Typical Scattering Data;158
8.8;VIII. Other Applications;173
8.9;ACKNOWLEDGMENTS;175
8.10;REFERENCES;176
9;CHAPTER 4. Special Imperfections in Semiconductors;182
9.1;I. Introduction;182
9.2;II. Electron Scattering by Dislocations;183
9.3;III. Natural Potential Wells in ZnSe;193
9.4;IV. Deep-Level Defects in Semi-Insulating GaAs;205
9.5;V. Concluding Remarks;219
9.6;ACKNOWLEDGMENTS;220
9.7;REFERENCES;220
10;CHAPTER 5. SIT as Ballistic Device;222
10.1;I. Introduction;222
10.2;II. SIT;224
10.3;III. Ideal SIT;238
10.4;IV. Ideal SITT;249
10.5;V. Conclusion;254
10.6;REFERENCES;255
11;INDEX;258