Chen / Hutchby / Zhirnov Emerging Nanoelectronic Devices

1. Auflage 2014
ISBN: 978-1-118-95826-1
Verlag: John Wiley & Sons
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 576 Seiten, E-Book

Emerging Nanoelectronic Devices focuses on the futuredirection of semiconductor and emerging nanoscale devicetechnology. As the dimensional scaling of CMOS approaches itslimits, alternate information processing devices andmicroarchitectures are being explored to sustain increasingfunctionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled byinnovative new devices, circuits, and architectures, necessary tosupport an increasingly interconnected world through a rapidlyevolving internet. This original title provides a fresh perspectiveon emerging research devices in 26 up to date chapters written bythe leading researchers in their respective areas. It supplementsand extends the work performed by the Emerging Research Devicesworking group of the International Technology Roadmap forSemiconductors (ITRS).
Key features:
* Serves as an authoritative tutorial on innovative devices andarchitectures that populate the dynamic world of "BeyondCMOS" technologies.
* Provides a realistic assessment of the strengths, weaknessesand key unknowns associated with each technology.
* Suggests guidelines for the directions of future development ofeach technology.
* Emphasizes physical concepts over mathematicaldevelopment.
* Provides an essential resource for students, researchers andpracticing engineers.

Autoren/Hrsg.

Chen, An

Hutchby, James

Zhirnov, Victor

Bourianoff, George

Über Autor(innen)

An Chen is with GLOBALFOUNDRIES, working on emerginglogic and memory technologies. He is the Memory TechnologyLead responsible for exploratory memory research with industrialconsortia including IMEC and Sematech. His memory researchfocuses primarily on RRAM and STTRAM. Prior toGLOBALFOUNDRIES, he worked at Spansion LLC on emerging memoryresearch and at Advanced Micro Devices (AMD) onnanoelectronics. He is currently chairing the EmergingResearch Device (ERD) working group in the International TechnologyRoadmap of Semiconductors (ITRS). He is also a Senior Memberof the IEEE.
James Hutchby, Senior Scientist, Emeritus, was formerlyDirector of Device Sciences of Semiconductor Research Corporation(SRC). Prior to joining SRC he was founding Director of theResearch Triangle Institute's Center for SemiconductorResearch, which consisted of five research groups performingresearch on: low-temperature growth of diamond; high efficiencymulti-bandgap solar cells; complementary HBT devices and integratedcircuits and high efficiency thermoelectrics and theremovoltaics.Dr Hutchby has authored or co-authored over 160 contributed andinvited papers. He is also a Life Fellow of the IEEE and arecipient of the IEEE Third Millennium Medal.
Victor Zhirnov is Director of Special Projects at theSRC. His research interests include nanoelectronics devices andsystems, properties of materials at the nanoscale and bio-inspiredelectronic systems. He also holds an adjunct faculty position atNorth Carolina State University and has served as an advisor to anumber of government, industrial, and academic institutions. VictorZhirnov has authored and co-authored over 100 technical papers andcontributions to books.
George Bourianoff is a Senior Principle Engineer in theComponents Research group at Intel. He is responsible fordeveloping and managing research programs in emerging researchtechnologies and architectures. He also serves on thescientific advisory boards of the Nanoelectronic ResearchInitiative (NRI) and the Semiconductor Technology Advanced ResearchNetwork. (STARnet). Prior to joining Intel in 1994 DrBourianoff was a group leader in the Superconducting SupercollidierProject in Texas responsible for accelerator simulation. Prior to that, he was a Senior Scientist with SAIC responsible forMagneto Hydrodynamic code development.