Langouche / Soares / Stoquert Nuclear Methods in Semiconductor Physics

1. Auflage 1992
ISBN: 978-0-444-59681-9
Verlag: Elsevier Science & Techn.
Format: PDF
Kopierschutz: 1 - PDF Watermark

E-Book, Englisch, Band Volume 25, 270 Seiten, Web PDF

Reihe: European Materials Research Society Symposia Proceedings

The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.

Autoren/Hrsg.

Langouche, G.

Soares, J. C.

Stoquert, J. P.