Martín-Palma / Martínez-Duart / Agullo-Rueda Nanotechnology for Microelectronics and Optoelectronics

1. Auflage 2006
ISBN: 978-0-08-045695-9
Verlag: Elsevier Science & Techn.
Format: EPUB
Kopierschutz: 6 - ePub Watermark

E-Book, Englisch, 302 Seiten

Reihe: Nanophotonics

When solids are reduced to the nanometer scale, they exibit new and exciting behaviours which constitute the basis for a new generation of electronic devices.
Nanotechnology for Microelectronics and Optoelectronics outlines in detail the fundamental solid-state physics concepts that explain the new properties of matter caused by this reduction of solids to the nanometer scale. Applications of these electronic properties is also explored, helping students and researchers to appreciate the current status and future potential of nanotechnology as applied to the electronics industry.
* Explains the behavioural changes which occur in solids at the nanoscale, making them the basis of a new generation of electronic devices.
* Laid out in text-reference style: a cohesive and specialised introduction to the fundamentals of nanoelectronics and nanophotonics for students and researchers alike.

José Martínez-Duart is Professor of Physics at Universidad Autónoma de Madrid, Spain. He is the author about three hundred publications in peer-reviewed scientific journals. During the 70s, he was Assistant Professor at Penn State University and Rensselaer Polytechnic Institute, and Research Visiting Scientist at the IBM T.J. Watson Research Center. Later was the Director of the Solid State Physics Institute (CSIC) at Madrid, and the Applied Physics Department at Universidad Autónoma, Madrid. He is the former President of the European Materials Research Society (EMRS), 2000-1, and the first President of the Spanish Materials Society. During the last twenty years he has been working on the electronic and optoelectronic properties of nanostructured materials. His previous books several books with Elsevier, serving as Co-Editor of the two-volumes, 'Materials and Processes for Submicron Technologies” and 'Current Trends in Nanotechnologies, as well as the first edition of the current book.

Autoren/Hrsg.

Martín-Palma, Raúl José

Martínez-Duart, José

Agullo-Rueda, Fernando

Inhaltsverzeichnis

1;NANOTECHNOLOGY FOR MICROELECTRONICS AND OPTOELECTRONICS;3
1.1;NANOTECHNOLOGY FOR MICROELECTRONICS AND OPTOELECTRONICS;5
1.1.1;Preface;7
1.1.2;About the Authors;11
1.1.3;Acknowledgements;13
1.1.4;Structure of the Book;15
1.1.5;CONTENTS;17
1.1.5.1;Chapter 1 Mesoscopic Physics and Nanotechnologies;25
1.1.5.1.1;1.1. OUTLOOK OF THE BOOK;25
1.1.5.1.2;1.2. TRENDS IN NANOELECTRONICS AND OPTOELECTRONICS;26
1.1.5.1.3;1.3. CHARACTERISTIC LENGTHS IN MESOSCOPIC SYSTEMS;30
1.1.5.1.4;1.4. QUANTUM MECHANICAL COHERENCE;33
1.1.5.1.5;1.5. QUANTUM WELLS, WIRES, AND DOTS;34
1.1.5.1.6;1.6. DENSITY OF STATES AND DIMENSIONALITY;35
1.1.5.1.7;1.7. SEMICONDUCTOR HETEROSTRUCTURES;37
1.1.5.1.8;1.8. QUANTUM TRANSPORT;39
1.1.5.1.9;REFERENCES;39
1.1.5.1.10;FURTHER READING;40
1.1.5.1.11;PROBLEMS;40
1.1.5.2;Chapter 2 Survey of Solid State Physics;45
1.1.5.2.1;2.1. INTRODUCTION;45
1.1.5.2.2;2.2. SHORT REVIEW OF QUANTUM MECHANICS;46
1.1.5.2.3;2.3. FREE ELECTRON MODEL OF A SOLID. DENSITY OF STATES FUNCTION;53
1.1.5.2.4;2.4. BLOCH THEOREM;56
1.1.5.2.5;2.5. ELECTRONS IN CRYSTALLINE SOLIDS;57
1.1.5.2.6;2.6. DYNAMICS OF ELECTRONS IN BANDS;62
1.1.5.2.7;2.7. LATTICE VIBRATIONS;67
1.1.5.2.8;2.8. PHONONS;72
1.1.5.2.9;REFERENCES;73
1.1.5.2.10;FURTHER READING;73
1.1.5.2.11;PROBLEMS;73
1.1.5.3;Chapter 3 Review of Semiconductor Physics;79
1.1.5.3.1;3.1. INTRODUCTION;79
1.1.5.3.2;3.2. ENERGY BANDS IN TYPICAL SEMICONDUCTORS;79
1.1.5.3.3;3.3. INTRINSIC AND EXTRINSIC SEMICONDUCTORS;82
1.1.5.3.4;3.4. ELECTRON AND HOLE CONCENTRATIONS IN SEMICONDUCTORS;85
1.1.5.3.5;3.5. ELEMENTARY TRANSPORT IN SEMICONDUCTORS;91
1.1.5.3.6;3.6. DEGENERATE SEMICONDUCTORS;97
1.1.5.3.7;3.7. OPTICAL PROPERTIES OF SEMICONDUCTORS;98
1.1.5.3.8;REFERENCES;109
1.1.5.3.9;FURTHER READING;109
1.1.5.3.10;PROBLEMS;109
1.1.5.4;Chapter 4 The Physics of Low-Dimensional Semiconductors;113
1.1.5.4.1;4.1. INTRODUCTION;113
1.1.5.4.2;4.2. BASIC PROPERTIES OF TWO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURES;114
1.1.5.4.3;4.3. SQUARE QUANTUM WELL OF FINITE DEPTH;118
1.1.5.4.4;4.4. PARABOLIC AND TRIANGULAR QUANTUM WELLS;120
1.1.5.4.5;4.5. QUANTUM WIRES;122
1.1.5.4.6;4.6. QUANTUM DOTS;124
1.1.5.4.7;4.7. STRAINED LAYERS;126
1.1.5.4.8;4.8. EFFECT OF STRAIN ON VALENCE BANDS;128
1.1.5.4.9;4.9. BAND STRUCTURE IN QUANTUM WELLS;131
1.1.5.4.10;4.10. EXCITONIC EFFECTS IN QUANTUM WELLS;133
1.1.5.4.11;REFERENCES;135
1.1.5.4.12;FURTHER READING;135
1.1.5.4.13;PROBLEMS;136
1.1.5.5;Chapter 5 Semiconductor Quantum Nanostructures and Superlattices;141
1.1.5.5.1;5.1. INTRODUCTION;141
1.1.5.5.2;5.2. MOSFET STRUCTURES;142
1.1.5.5.3;5.3. HETEROJUNCTIONS;145
1.1.5.5.4;5.4. QUANTUM WELLS;149
1.1.5.5.5;5.5. SUPERLATTICES;153
1.1.5.5.6;REFERENCES;163
1.1.5.5.7;FURTHER READING;163
1.1.5.5.8;PROBLEMS;163
1.1.5.6;Chapter 6 Electric Field Transport in Nanostructures;167
1.1.5.6.1;6.1. INTRODUCTION;167
1.1.5.6.2;6.2. PARALLEL TRANSPORT;167
1.1.5.6.3;6.3. PERPENDICULAR TRANSPORT;175
1.1.5.6.4;6.4. QUANTUM TRANSPORT IN NANOSTRUCTURES;181
1.1.5.6.5;REFERENCES;191
1.1.5.6.6;FURTHER READING;191
1.1.5.6.7;PROBLEMS;191
1.1.5.7;Chapter 7 Transport in Magnetic Fields and the Quantum Hall Effect;197
1.1.5.7.1;7.1. INTRODUCTION;197
1.1.5.7.2;7.2. EFFECT OF A MAGNETIC FIELD ON A CRYSTAL;198
1.1.5.7.3;7.3. LOW-DIMENSIONAL SYSTEMS IN MAGNETIC FIELDS;200
1.1.5.7.4;7.4. DENSITY OF STATES OF A 2D SYSTEM IN A MAGNETIC FIELD;201
1.1.5.7.5;7.5. THE AHARONOV–BOHM EFFECT;202
1.1.5.7.6;7.6. THE SHUBNIKOV–DE HAAS EFFECT;205
1.1.5.7.7;7.7. THE QUANTUM HALL EFFECT;207
1.1.5.7.8;REFERENCES;216
1.1.5.7.9;FURTHER READING;216
1.1.5.7.10;PROBLEMS;217
1.1.5.8;Chapter 8 Optical and Electro-optical Processes in Quantum Heterostructures;221
1.1.5.8.1;8.1. INTRODUCTION;221
1.1.5.8.2;8.2. OPTICAL PROPERTIES OF QUANTUM WELLS AND SUPERLATTICES;221
1.1.5.8.3;8.3. OPTICAL PROPERTIES OF QUANTUM DOTS AND NANOCRYSTALS;226
1.1.5.8.4;8.4. ELECTRO-OPTICAL EFFECTS IN QUANTUM WELLS. QUANTUM CONFINED STARK EFFECT;235
1.1.5.8.5;8.5. ELECTRO-OPTICAL EFFECTS IN SUPERLATTICES. STARK LADDERS AND BLOCH OSCILLATIONS;238
1.1.5.8.6;REFERENCES;242
1.1.5.8.7;FURTHER READING;243
1.1.5.8.8;PROBLEMS;243
1.1.5.9;Chapter 9 Electronic Devices Based on Nanostructures;247
1.1.5.9.1;9.1. INTRODUCTION;247
1.1.5.9.2;9.2. MODFETS;249
1.1.5.9.3;9.3. HETEROJUNCTION BIPOLAR TRANSISTORS;251
1.1.5.9.4;9.4. RESONANT TUNNEL EFFECT;254
1.1.5.9.5;9.5. HOT ELECTRON TRANSISTORS;256
1.1.5.9.6;9.6. RESONANT TUNNELLING TRANSISTOR;259
1.1.5.9.7;9.7. SINGLE ELECTRON TRANSISTOR;262
1.1.5.9.8;REFERENCES;264
1.1.5.9.9;FURTHER READING;265
1.1.5.9.10;PROBLEMS;265
1.1.5.10;Chapter 10 Optoelectronic Devices Based on Nanostructures;269
1.1.5.10.1;10.1. INTRODUCTION;269
1.1.5.10.2;10.2. HETEROSTRUCTURE SEMICONDUCTOR LASERS;269
1.1.5.10.3;10.3. QUANTUM WELL SEMICONDUCTOR LASERS;273
1.1.5.10.4;10.4. VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS);276
1.1.5.10.5;10.5. STRAINED QUANTUM WELL LASERS;278
1.1.5.10.6;10.6. QUANTUM DOT LASERS;280
1.1.5.10.7;10.7. QUANTUM WELL AND SUPERLATTICE PHOTODETECTORS;284
1.1.5.10.8;10.8. QUANTUM WELL MODULATORS;287
1.1.5.10.9;REFERENCES;289
1.1.5.10.10;FURTHER READING;289
1.1.5.10.11;PROBLEMS;290
1.1.5.11;Index;293