Rius / Godignon Epitaxial Graphene on Silicon Carbide

Modelling, Characterization, and Applications
1. Auflage 2017
ISBN: 978-1-351-73622-0
Verlag: Taylor & Francis
Format: PDF
Kopierschutz: Adobe DRM (»Systemvoraussetzungen)

E-Book, Englisch, 260 Seiten

This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It addresses comprehensively all aspects relevant for the study and technology development of EG materials and their applications. It includes the state of the art on the synthesis of EG-SiC, which is profusely explained as a function of SiC substrate characteristics, such as polytype, polarity, and wafer cut, as well as both in situ and ex situ conditioning techniques, including H2 pre-deposition annealing, chemical mechanical polishing, etc. It generously describes growth studies including the most popular techniques for high quality and controlled deposition such as ultrahigh vacuum–processing, partial-pressure, or graphite cap controlled–sublimation techniques.

The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Autoren/Hrsg.

Rius, Gemma

Godignon, Philippe

Fachgebiete

• Naturwissenschaften Physik Thermodynamik Festkörperphysik, Kondensierte Materie
• Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde

Inhaltsverzeichnis

Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material Science

Gabriel Ferro

Growth Mechanism, Structures, and the Properties of Graphene on SiC {0001} Surfaces: Theoretical and Experimental Studies at the Atomic Scale

Wataru Norimatsu

Fabrication of Graphene by Thermal Decomposition of SiC

G. Reza Yazdi, Tihomir Iakimova, and Rositza Yakimova

Nanoscale Electrical and Structural Properties of Epitaxial Graphene Interface with SiC(0001)

F. Giannazzo, I. Deretzis, A. La Magna, G. Nicotra, C. Spinella, F. Roccaforte, and R. Yakimova

Theory of Graphene Growth on SiC Substrate

Hiroyuki Kageshima

Epitaxial Graphene on SiC from the Viewpoint of Planar Technology

Gemma Rius

The Beauty of Quantum Transport in Graphene

B. Jouault, F. Schopfer, and W. Poirier

Raman Spectroscopy of Graphene on Silicon Carbide

Ana Ballestar

Graphene on SiC: Chemico-Physical Characterization

Micaela Castellino and Jordi Fraxedas

Über Autor(innen)

Gemma Rius is a Beatriu de Pinós postdoctoral fellow at the Institute of Microelectronics of Barcelona-National Center of Microelectronics (IMB-CNM) of the Spanish National Research Council (Superior Council for Scientific Research, CSIC) since 2015. She graduated in physics from the Autonomous University of Barcelona (UAB), Spain. From 2002 to 2008, she was a nanolithography engineer and PhD student at IMB-CNM, CSIC. As a postdoctoral researcher in Japan, she has been at Tohoku University and Toyota Technological Institute. She then joined Nagoya Institute of Technology, Japan, as assistant professor. Dr. Ruis has been mainly working on nanostructuring of 2D materials and has been involved in carbon nanomaterials, such as graphene, for more than 12 years.

Philippe Godignon is a professor of electronic engineering, aerospace engineering, and physical chemistry at IMB-CNM. He received his PhD in electrical engineering in 1993 from the National Institute of Applied Sciences in Lyon (INSA Lyon), France. Since 1990, he has been working in the Power Devices and Systems group of IMB-CNM, Spain, on Si and SiC semiconductor devices design and technologies. More recently, he has also been working on carbon-based materials synthesis and processing (CNT, graphene, and polymers) for nanotechnologies and biosensors. He is co-author of more than 235 publications in international journals and numerous presentation for conferences, and of 16 patents. He also participated to the creation of two companies, Graphene Nanotech S. L. and CALY Technologies, France.