Buch, Englisch, 412 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 688 g
Buch, Englisch, 412 Seiten, Format (B × H): 152 mm x 229 mm, Gewicht: 688 g
ISBN: 978-981-4316-29-3
Verlag: Pan Stanford
This book contains comprehensive reviews of different technologies used to harness lattice mismatch in semiconductor heterostructures and their applications in electronic and optoelectronic devices. It also covers methods such as compliant substrate, selective area growth, wafer bonding, and heterostructure nanowires. Basic knowledge on dislocations in semiconductors and innovative methods to eliminate threading dislocations are provided, and successful device applications are reviewed. It covers important semiconductor materials, epitaxial methods, and devices.
Zielgruppe
Academic and Postgraduate
Autoren/Hrsg.
Fachgebiete
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
Weitere Infos & Material
Dislocation Reduction by Interfacial Misfit Method. Compliant Substrates. Selective Area Growth. Low Temperature Direct Wafer Bonding. Heterostructures and Strain Relaxation In Semiconductor Nanowires. Epitaxial Growth of Nitrides. Metamorphic HEMT Technology. Metamorphic Hbts, Metamorphic Quantum Dot Lasers. Metamorphic Quantum Well Lasers. Nitride Based LEDS And Laser Diodes.