Buch, Englisch, 122 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 371 g
Buch, Englisch, 122 Seiten, HC runder Rücken kaschiert, Format (B × H): 160 mm x 241 mm, Gewicht: 371 g
ISBN: 978-3-030-04512-8
Verlag: Springer International Publishing
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
Weitere Infos & Material
Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits.- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET.- Chapter 3. Modeling of Classical SOI-MESFET.- Chapter 4. Design and modeling of triple-material gate SOI-MESFET.- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET.- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices.- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs).