Buch, Englisch, Band 47, 187 Seiten, Paperback, Format (B × H): 155 mm x 235 mm, Gewicht: 3226 g
Buch, Englisch, Band 47, 187 Seiten, Paperback, Format (B × H): 155 mm x 235 mm, Gewicht: 3226 g
Reihe: Springer Series in Advanced Microelectronics
ISBN: 978-94-024-0205-6
Verlag: Springer Netherlands
This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated.
The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Zielgruppe
Research
Autoren/Hrsg.
Fachgebiete
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Technische Mechanik | Werkstoffkunde Materialwissenschaft: Elektronik, Optik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Halb- und Supraleitertechnologie
- Technische Wissenschaften Maschinenbau | Werkstoffkunde Produktionstechnik Zuverlässigkeitstechnik
- Naturwissenschaften Physik Elektromagnetismus Halbleiter- und Supraleiterphysik
- Technische Wissenschaften Elektronik | Nachrichtentechnik Elektronik Transistoren
Weitere Infos & Material
1 Introduction.- 2 Degradation mechanisms.- 3 Techniques and devices.- 4 Negative Bias Temperature Instability in (Si)Ge pMOSFETs.- 5 Negative Bias Temperature Instability in nanoscale devices.- 6 Channel Hot Carriers and other reliability mechanisms.- 7 Conclusions and perspectives.